A Novel Solid State Power Amplifier for RF Cooking Applications
Keywords:
GaN HEMT, Power amplifier, RF cookingAbstract
In this paper, a single-stage solid-state power amplifier (SSPA) with 250W output power, high efficiency and 12 dB gain for use in 2.4-2.5 GHz RF cooking application is designed and simulation results are given. Gallium Nitride (GaN) high electron mobility transistor (HEMT) used as active device. Rogers RT5870 with dielectric constant of 2.33, dielectric thickness of 31 mil and a copper thickness of 35 ?m is used as the substrate. According to the simulation results, 250 ± 5 W output power, 65 ± 1% power added efficiency and 12.1 ± 0.1 dB gain were obtained in the 2.4 - 2.5 GHz band. Because of the high output power of the amplifier, 2nd and other higher degree harmonic levels must be checked to prevent suppressing the communication of other electronic systems such as radars, base stations etc. 2nd harmonic is approximately 27 dB lower; 3rd harmonic is 20 dB lower; 4th harmonic is 36 dB lower and lastly 5th harmonic is 33 dB lower than fundamental over the band.
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